STD50N03L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1434pF @ 25V

Power Dissipation-Max :

60W Tc

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24 ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

2

Terminal Form :

Gull wing

Resistance :

10.5mOhm

Power Dissipation :

60W

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Pin Count :

3

Series :

STripFET™ III

Pulsed Drain Current-Max (IDM) :

160A

Fall Time (Typ) :

45 ns

Terminal Finish :

MATTE TIN

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Base Part Number :

STD50N

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

40A

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

3

JESD-609 Code :

e3

Number of Elements :

1

Rise Time :

125ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 20A, 10V