STD5407NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.9W Ta 75W Tc

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Voltage (Vdss) :

40V

Surface Mount :

yes

Lifecycle Status :

CONSULT SALES OFFICE (Last Updated: 1 week ago)

Lead Free :

Lead Free

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

2.9W

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.026ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Published :

2013

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

75A

Continuous Drain Current (ID) :

7.6A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 38A Tc

Factory Lead Time :

24 Weeks

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

26m Ω @ 20A, 10V

Element Configuration :

Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 32V