STD5NM50T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7.5A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

MDmesh™

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Power Dissipation :

100W

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

JESD-609 Code :

e3

Resistance :

800mOhm

Current Rating :

7.5A

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 25V

Mounting Type :

Surface Mount

Power Dissipation-Max :

100W Tc

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Voltage - Rated DC :

500V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

16 ns

Height :

2.4mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Element Configuration :

Single

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Length :

6.6mm

Vgs (Max) :

±30V

Fall Time (Typ) :

6 ns

Transistor Application :

SWITCHING

Weight :

4.535924g

Terminal Form :

Gull wing

Width :

6.2mm

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Rise Time :

8ns

Drain Current-Max (Abs) (ID) :

5A

Pin Count :

3

Packaging :

Cut Tape (CT)

Base Part Number :

STD5N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED