STD5NM50AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

100W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Avalanche Energy Rating (Eas) :

300 mJ

Series :

MDmesh™

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 100V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Terminal Position :

Single

Surface Mount :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.8Ohm

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Base Part Number :

STD5N

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

30A

Drain Current-Max (Abs) (ID) :

7.5A