STD5NK52ZD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

529pF @ 25V

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Lead Free :

Lead Free

Base Part Number :

STD5N

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

520V

Pin Count :

3

Series :

SuperMESH™

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation-Max :

70W Tc

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Current Rating :

4.4A

Rise Time :

13.6ns

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

520V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4.4A

Number of Pins :

3

Qualification Status :

Not Qualified

Fall Time (Typ) :

15 ns

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation :

70W

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Element Configuration :

Single

Turn-Off Delay Time :

23.1 ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

16.9nC @ 10V

Gate to Source Voltage (Vgs) :

30V