STD5N95K5
- Mfr.Part #
- STD5N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 3.5A DPAK
- Stock
- 13,929
- In Stock :
- 13,929
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SuperMESH5™
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 6.6mm
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.5A, 10V
- Height :
- 2.4mm
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 100V
- Turn-Off Delay Time :
- 32 ns
- Factory Lead Time :
- 17 Weeks
- Transistor Element Material :
- SILICON
- Base Part Number :
- STD5N
- Continuous Drain Current (ID) :
- 3.5A
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 950V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Weight :
- 3.949996g
- Element Configuration :
- Single
- Number of Channels :
- 1
- Rise Time :
- 16ns
- Number of Terminations :
- 2
- Width :
- 6.2mm
- Fall Time (Typ) :
- 25 ns
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Power Dissipation-Max :
- 70W Tc
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Datasheets
- STD5N95K5
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N-Channel Tape & Reel (TR) 2.5 Ω @ 1.5A, 10V 220pF @ 100V 12.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N95K5 Description
N-channel STD5N95K5 Zener-protected Utilizing an inventive, patented vertical structure, ST's avalanche-rugged, very high voltage SuperMESH 5 technology is used to design power MOSFETs. As a result, on-resistance is drastically decreased, and ultra-low gate charges are produced for applications that demand a high level of efficiency and improved power density.
STD5N95K5 Features
-
Ultra-low gate charge
-
100% avalanche tested
-
Zener-protected
-
Industry’s lowest RDS(on) x area
-
Industry’s best FoM (figure of merit)
STD5N95K5 Applications
-
Switching applications
-
Audio
-
Industrial
-
Power switching circuits
-
Amplifier circuits
-
PWM applications
-
Regulator circuits
-
Switch-mode power supply
-
Signal Amplifiers
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