STD5N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™

Mounting Type :

Surface Mount

Terminal Position :

Single

Surface Mount :

yes

Base Part Number :

STD5N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation-Max :

60W Tc

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

165 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

4A

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

177pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

800V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 2A, 10V

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

16A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Vgs(th) (Max) @ Id :

5V @ 100µA

Operating Temperature :

-55°C~150°C TJ