STD5N62K3
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- Mfr.Part #
- STD5N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 4.2A DPAK
- Stock
- 79,711
- In Stock ：
- 79,711
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 620V
- Fall Time (Typ) :
- 21 ns
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pin Count :
- 3
- Rise Time :
- 8ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 70W Tc
- FET Type :
- N-Channel
- Series :
- SuperMESH3™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 40 ns
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2.1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 50V
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.4mm
- ECCN Code :
- EAR99
- Width :
- 6.2mm
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 4.2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Part Number :
- STD5N
- REACH SVHC :
- No SVHC
- Resistance :
- 1.6Ohm
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 30V
- Threshold Voltage :
- 3.75V
- Power Dissipation :
- 70W
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Radiation Hardening :
- No
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Length :
- 6.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Tc
- Number of Terminations :
- 2
- Datasheets
- STD5N62K3
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N-Channel Tape & Reel (TR) 1.6 Ω @ 2.1A, 10V ±30V 680pF @ 50V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N62K3 Overview
The maximum input capacitance of this device is 680pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.2A.When VGS=620V, and ID flows to VDS at 620VVDS, the drain-source breakdown voltage is 620V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.75V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STD5N62K3 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 40 ns
a threshold voltage of 3.75V
STD5N62K3 Applications
There are a lot of STMicroelectronics
STD5N62K3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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