STD5N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

70 ns

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Base Part Number :

STD5N

FET Type :

N-Channel

Element Configuration :

Single

Rise Time :

3ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11.8 ns

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.7A, 10V

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

3.5A

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Pins :

3

Number of Terminations :

2

Factory Lead Time :

16 Weeks

Avalanche Energy Rating (Eas) :

80 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

Number of Channels :

1

Power Dissipation-Max :

45W Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Lead Free :

Lead Free

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

150°C TJ

Weight :

3.949996g

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Series :

MDmesh™ II Plus

Input Capacitance (Ciss) (Max) @ Vds :

211pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V