STD5N52K3
- Mfr.Part #
- STD5N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4.4A DPAK
- Stock
- 5,336
- In Stock :
- 5,336
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs (Max) :
- ±30V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 70W Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 545pF @ 100V
- Fall Time (Typ) :
- 16 ns
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 3.75V
- Pin Count :
- 3
- Power Dissipation :
- 70W
- Rise Time :
- 11ns
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 9 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 2.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 30V
- Base Part Number :
- STD5N
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 525V
- Turn-Off Delay Time :
- 29 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance :
- 1.5Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 4.4A
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Width :
- 6.2mm
- Series :
- SuperMESH3™
- Length :
- 6.6mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STD5N52K3
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N-Channel Tape & Reel (TR) 1.5 Ω @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N52K3 MOSFET Description
The MDmeshTM K3 Power MOSFET STD5N52K3 is the product of STMicroelectronics' MDmeshTM technology being improved, as well as a new optimized vertical structure. The STD5N52K3 has a low on-resistance, excellent dynamic performance, and great avalanche capability, making it ideal for the most demanding applications. The Drain-Source voltage of this device is 525 V and the Gate-Source voltage is ± 30 V.
STD5N52K3 MOSFET Features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener-protected
STD5N52K3 MOSFET Applications
Switching Applications
TV SMPS
Fast Chargers
Adapters
LED Lightings
Micro-converters
Electric Vehicles
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