STD5N20LT4
- Mfr.Part #
- STD5N20LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5A DPAK
- Stock
- 17,931
- In Stock :
- 17,931
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Series :
- STripFET™
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain Current-Max (Abs) (ID) :
- 5A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 33W Tc
- Power Dissipation :
- 33W
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 242pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Height :
- 2.63mm
- Width :
- 6.2mm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 5A
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 2.5 V
- Termination :
- SMD/SMT
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 200V
- Dual Supply Voltage :
- 200V
- Max Junction Temperature (Tj) :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 5A
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 200V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 6.6mm
- Resistance :
- 700mOhm
- Fall Time (Typ) :
- 15.5 ns
- Turn-Off Delay Time :
- 14 ns
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Rise Time :
- 21.5ns
- Threshold Voltage :
- 2.5V
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.5V @ 50μA
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Turn On Delay Time :
- 11.5 ns
- REACH SVHC :
- No SVHC
- Base Part Number :
- STD5N
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 5V
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 2.5A, 5V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 20A
- Lead Free :
- Lead Free
- Datasheets
- STD5N20LT4
STD5N20LT4 Documents
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N-Channel Tape & Reel (TR) 700m Ω @ 2.5A, 5V ±20V 242pF @ 25V 6nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N20LT4 Description
STD5N20LT4 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 200V. The operating temperature of the STD5N20LT4 is -55°C~150°C TJ and its maximum power dissipation is 33W Tc. The STD5N20L makes use of the most recent advanced design guidelines for ST's exclusive STripFETTM technology. The most demanding DC motor control and lighting applications can use this.
STD5N20LT4 Features
-
TYPICAL RDS(on) = 0.65 ? @ 5V
-
CONDUCTION LOSSES REDUCED
-
LOW INPUT CAPACIATNCE
-
LOW THRESHOLD DEVICE
STD5N20LT4 Applications
-
UPS AND MOTOR CONTROL
-
LIGHTING
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