STD2NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Rise Time :

8ns

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

8A

Qualification Status :

Not Qualified

Power Dissipation :

46W

Time@Peak Reflow Temperature-Max (s) :

30

Series :

MDmesh™

Drain to Source Breakdown Voltage :

600V

Current Rating :

2A

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

600V

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Base Part Number :

STD2N

Fall Time (Typ) :

25 ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

2A

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

46W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

2A

JESD-609 Code :

e3

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

250 mJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 10V

Reach Compliance Code :

not_compliant