STD2NK90ZT4
- Mfr.Part #
- STD2NK90ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 2.1A DPAK
- Stock
- 3,868
- In Stock :
- 3,868
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3.75V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Base Part Number :
- STD2N
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 70W Tc
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 900V
- Rise Time :
- 11ns
- Resistance :
- 6.5Ohm
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 43 ns
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 1.05A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Width :
- 6.2mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 900V
- JEDEC-95 Code :
- TO-252AA
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 2.1A
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 21 ns
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 40 ns
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 2.1A
- Length :
- 6.6mm
- Series :
- SuperMESH™
- Height :
- 2.4mm
- Pulsed Drain Current-Max (IDM) :
- 8.4A
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Power Dissipation :
- 70W
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Datasheets
- STD2NK90ZT4
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N-Channel Tape & Reel (TR) 6.5 Ω @ 1.05A, 10V ±30V 485pF @ 25V 27nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD2NK90ZT4 Description
These high voltage devices are Zener-protected N-channel power MOSFET developed by STMicroelectronics using SuperMESH protection technology and are optimized for the well-known power mesh gate. In addition to significantly reducing on-resistance, these devices are designed to ensure a high level of DV/DT capability for the most demanding applications.
STD2NK90ZT4 Features
? Extremely high dv/dt capability
? 100% avalanche tested
? Gate charge minimized
? Very low intrinsic capacitance
? Zener-protected
STD2NK90ZT4 Applications
? Switching applications
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