STD2NC45-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

4ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

450V

Gate to Source Voltage (Vgs) :

30V

Nominal Vgs :

3 V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

6A

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

30W

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Dual Supply Voltage :

450V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Mount :

Through Hole

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Avalanche Energy Rating (Eas) :

25 mJ

Continuous Drain Current (ID) :

1.5A

Turn-Off Delay Time :

8.5 ns

Number of Terminations :

3

Power Dissipation-Max :

30W Tc

Series :

SuperMESH™

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Base Part Number :

STD2N

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

12 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

REACH SVHC :

No SVHC

Turn On Delay Time :

6.7 ns

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Number of Pins :

3

JESD-609 Code :

e3

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks