STD2N62K3
- Mfr.Part #
- STD2N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.2A DPAK
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 6.2mm
- Length :
- 6.6mm
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 2.2A
- Radiation Hardening :
- No
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 4.4ns
- Turn-Off Delay Time :
- 21 ns
- Power Dissipation-Max :
- 45W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 50V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Drain to Source Breakdown Voltage :
- 620V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Series :
- SuperMESH3™
- Turn On Delay Time :
- 8 ns
- Fall Time (Typ) :
- 22 ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.1A, 10V
- Number of Terminations :
- 2
- Height :
- 2.4mm
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 45W
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Threshold Voltage :
- 3.75V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Avalanche Energy Rating (Eas) :
- 85 mJ
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Part Number :
- STD2N62
- Pin Count :
- 3
- Resistance :
- 3.6Ohm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Pulsed Drain Current-Max (IDM) :
- 8.8A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- Datasheets
- STD2N62K3
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N-Channel Tape & Reel (TR) 3.6 Ω @ 1.1A, 10V ±30V 340pF @ 50V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD2N62K3 Description
These MDmeshTM K3 Power MOSFETs are the product of STMicroelectronics' MD meshTM technology being improved, as well as a new optimized vertical structure. These devices have a low on-resistance, excellent dynamic performance, and great avalanche capability, making them ideal for the most demanding applications.
STD2N62K3 Features
-
100% avalanche tested
-
Extremely high DV/DT capability
-
Very low intrinsic capacitance
-
Improved diode reverse recovery characteristics
-
Zener-protected
STD2N62K3 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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