STD2N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.1A, 10V

Width :

6.2mm

Base Part Number :

STD2N62

Number of Pins :

3

Rise Time :

4.4ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Element Configuration :

Single

Turn-Off Delay Time :

21 ns

FET Type :

N-Channel

Resistance :

3.6Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Height :

2.4mm

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

8.8A

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

85 mJ

Power Dissipation-Max :

45W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 50V

Number of Elements :

1

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

2

REACH SVHC :

No SVHC

Length :

6.6mm

Fall Time (Typ) :

22 ns

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

45W

Vgs (Max) :

±30V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.2A

Drain to Source Breakdown Voltage :

620V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Series :

SuperMESH3™

Operating Temperature :

150°C TJ

Threshold Voltage :

3.75V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

8 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc