STD2HNK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Radiation Hardening :

No

Base Part Number :

STD2HNK

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1A, 10V

Turn-Off Delay Time :

13 ns

Series :

SuperMESH™

Pulsed Drain Current-Max (IDM) :

8A

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Vgs (Max) :

±30V

Turn On Delay Time :

10 ns

Number of Elements :

1

Power Dissipation :

45W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Transistor Element Material :

SILICON

Fall Time (Typ) :

50 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

2A

JEDEC-95 Code :

TO-252AA

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

45W Tc

Drain Current-Max (Abs) (ID) :

2A

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Rise Time :

30ns

Lead Free :

Lead Free

Resistance :

4.8Ohm