STD27N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

STripFET™ V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Gate to Source Voltage (Vgs) :

22V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 5V

Number of Elements :

1

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

19m Ω @ 13.5A, 10V

Pbfree Code :

yes

Base Part Number :

STD27N

Power Dissipation :

30W

Pin Count :

3

Vgs (Max) :

±22V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

4 ns

Avalanche Energy Rating (Eas) :

50 mJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

108A

Power Dissipation-Max :

30W Tc

Fall Time (Typ) :

2.8 ns

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

27A

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Rise Time :

22ns

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - annealed

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 25V

Resistance :

19mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Turn-Off Delay Time :

13 ns

Terminal Position :

Single

Number of Terminations :

2