STD26P3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Length :

6.6mm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Width :

6.2mm

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Part Number :

STD26P

Transistor Element Material :

SILICON

Number of Terminations :

2

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Turn-Off Delay Time :

24 ns

Threshold Voltage :

-2.5V

Continuous Drain Current (ID) :

12A

Height :

2.4mm

Element Configuration :

Single

Series :

DeepGATE™, STripFET™ VI

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Transistor Application :

SWITCHING

FET Type :

P-Channel

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Pins :

3

Lead Free :

Lead Free

Resistance :

5.5mOhm

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

48A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

21 ns

Operating Temperature :

175°C TJ

Turn On Delay Time :

15 ns

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

40W Tc