STD26P3LLH6
- Mfr.Part #
- STD26P3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 12A DPAK
- Stock
- 13,530
- In Stock :
- 13,530
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Height :
- 2.4mm
- Length :
- 6.6mm
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Rise Time :
- 15ns
- Number of Elements :
- 1
- Fall Time (Typ) :
- 21 ns
- Element Configuration :
- Single
- Threshold Voltage :
- -2.5V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Pulsed Drain Current-Max (IDM) :
- 48A
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6A, 10V
- Continuous Drain Current (ID) :
- 12A
- REACH SVHC :
- No SVHC
- Series :
- DeepGATE™, STripFET™ VI
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 40W Tc
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 6.2mm
- Drain to Source Breakdown Voltage :
- -30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1450pF @ 25V
- Base Part Number :
- STD26P
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 3
- Turn On Delay Time :
- 15 ns
- Resistance :
- 5.5mOhm
- Turn-Off Delay Time :
- 24 ns
- FET Type :
- P-Channel
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Operating Temperature :
- 175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Datasheets
- STD26P3LLH6
STD26P3LLH6 Documents
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P-Channel Tape & Reel (TR) 30m Ω @ 6A, 10V ±20V 1450pF @ 25V 12nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
STD26P3LLH6 Description
STD26P3LLH6 is a P-channel Power MOSFET developed using the 6thgeneration of STripFET? DeepGATE? technology, with a new gate structure. The STD26P3LLH6 Power MOSFET exhibits the lowest RDS(on)in all packages.
STD26P3LLH6 Features
-
High avalanche ruggedness
-
Low gate input resistance
-
RDS(on)* Qgindustry benchmark
-
Extremely low on-resistance RDS(on)
STD26P3LLH6 Applications
-
Switching applications
-
LCC converters
-
resonant converters
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