STD25NF20
- Mfr.Part #
- STD25NF20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A DPAK
- Stock
- 9,200
- In Stock :
- 9,200
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Rise Time :
- 30ns
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Height :
- 2.63mm
- Turn On Delay Time :
- 15 ns
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 72A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Length :
- 6.6mm
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 200V
- Power Dissipation-Max :
- 110W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Base Part Number :
- STD25N
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101, STripFET™
- Turn-Off Delay Time :
- 40 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Junction Temperature (Tj) :
- 175°C
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 10 ns
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 10A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 6.2mm
- Radiation Hardening :
- No
- Power Dissipation :
- 110W
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 18A
- Datasheets
- STD25NF20
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N-Channel Cut Tape (CT) 125m Ω @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD25NF20 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 940pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 72A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD25NF20 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 72A.
STD25NF20 Applications
There are a lot of STMicroelectronics
STD25NF20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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