STD25NF10T4

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Mfr.Part #
STD25NF10T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 25A DPAK
Stock
9,040
In Stock :
9,040

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
38mOhm
Turn On Delay Time :
17 ns
JESD-609 Code :
e3
Vgs (Max) :
±20V
Rise Time :
60ns
Termination :
SMD/SMT
Fall Time (Typ) :
15 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
30
REACH SVHC :
No SVHC
Base Part Number :
STD25N
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Avalanche Energy Rating (Eas) :
480 mJ
Length :
6.6mm
Continuous Drain Current (ID) :
12.5A
Max Junction Temperature (Tj) :
175°C
Drain to Source Breakdown Voltage :
100V
Element Configuration :
Single
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Width :
6.2mm
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Terminal Form :
Gull wing
Contact Plating :
Tin
Height :
2.63mm
Number of Channels :
1
Pin Count :
3
Dual Supply Voltage :
100V
Turn-Off Delay Time :
60 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Nominal Vgs :
3 V
Threshold Voltage :
2V
ECCN Code :
EAR99
Mount :
Surface Mount
Mounting Type :
Surface Mount
Voltage - Rated DC :
100V
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
100W Tc
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
38m Ω @ 12.5A, 10V
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
2
Transistor Application :
SWITCHING
Radiation Hardening :
No
Series :
STripFET™ II
Power Dissipation :
100W
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1550pF @ 25V
Current Rating :
25A
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Datasheets
STD25NF10T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD25NF10T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STD25N, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, STD25NF10T4 pinout, STD25NF10T4 datasheet PDF, STD25NF10T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD25NF10T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD25NF10T4


N-Channel Tape & Reel (TR) 38m Ω @ 12.5A, 10V ±20V 1550pF @ 25V 55nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD25NF10T4 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The maximum input capacitance of this device is 1550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12.5A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STD25NF10T4 Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
a threshold voltage of 2V


STD25NF10T4 Applications


There are a lot of STMicroelectronics
STD25NF10T4 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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