STD25NF10LA

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 25V

Pin Count :

3

ECCN Code :

EAR99

Mount :

Surface Mount

Threshold Voltage :

2.5V

Number of Terminations :

2

Power Dissipation-Max :

100W Tc

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

25A

Turn On Delay Time :

20 ns

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Base Part Number :

STD25N

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Case Connection :

DRAIN

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drain to Source Voltage (Vdss) :

100V

Series :

STripFET™ II

Avalanche Energy Rating (Eas) :

450 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 5V

JESD-30 Code :

R-PSSO-G2

Rise Time :

40ns

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.04Ohm

Terminal Form :

Gull wing

Turn-Off Delay Time :

58 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

20 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

35m Ω @ 12.5A, 10V

Power Dissipation :

100W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

6.8mm