SST2907AT116
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- Mfr.Part #
- SST2907AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SST3
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Base Part Number :
- T2907A
- hFE Min :
- 50
- Collector Emitter Saturation Voltage :
- -1.6V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 200MHz
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Factory Lead Time :
- 10 Weeks
- Published :
- 2007
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- PNP
- Turn Off Time-Max (toff) :
- 100ns
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Voltage - Rated DC :
- -60V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Collector-Base Capacitance-Max :
- 7pF
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- -600mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- VCEsat-Max :
- 0.6 V
- Transition Frequency :
- 200MHz
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Power - Max :
- 350mW
- Collector Base Voltage (VCBO) :
- -60V
- Datasheets
- SST2907AT116
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST2907AT116 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1.6V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
SST2907AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
SST2907AT116 Applications
There are a lot of ROHM Semiconductor
SST2907AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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