SST2222AHZGT116
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- Mfr.Part #
- SST2222AHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SST3
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 13 Weeks
- Frequency - Transition :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- R-PDSO-G3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 300MHz
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Turn Off Time-Max (toff) :
- 285ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2016
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 35ns
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 600mA
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Datasheets
- SST2222AHZGT116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
SST2222AHZGT116 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.300MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 40V.
SST2222AHZGT116 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
SST2222AHZGT116 Applications
There are a lot of ROHM Semiconductor
SST2222AHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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