SST2222AT116
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- Mfr.Part #
- SST2222AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SST3
- Stock
- 30,289
- In Stock ：
- 30,289
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 600mA
- hFE Min :
- 35
- Continuous Collector Current :
- 600mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Base Part Number :
- T2222A
- Max Collector Current :
- 600mA
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- HTS Code :
- 8541.21.00.75
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 285ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector-Base Capacitance-Max :
- 7pF
- Published :
- 2007
- Termination :
- SMD/SMT
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- SST2222AT116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST2222AT116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
SST2222AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SST2222AT116 Applications
There are a lot of ROHM Semiconductor
SST2222AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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