SSD2025TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

3.3A

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.3A, 10V

Pulsed Drain Current-Max (IDM) :

10A

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Number of Terminations :

8

JESD-609 Code :

e0

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Count :

8

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

3.3A

Mounting Type :

Surface Mount

Pbfree Code :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Power - Max :

2W

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.1Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN LEAD