SS8050DTA
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- Mfr.Part #
- SS8050DTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 152,460
- In Stock ：
- 152,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Weight :
- 240mg
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Max Collector Current :
- 1.5A
- Base Part Number :
- SS8050
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- hFE Min :
- 85
- Operating Temperature :
- 150°C TJ
- Length :
- 4.58mm
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Current Rating :
- 1.5A
- Voltage - Rated DC :
- 25V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Height :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 40V
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Max Breakdown Voltage :
- 25V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 190MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Width :
- 3.86mm
- Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Datasheets
- SS8050DTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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