SS8050DTA
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- Mfr.Part #
- SS8050DTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 152,460
- In Stock ：
- 152,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.86mm
- Collector Emitter Saturation Voltage :
- 500mV
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Current Rating :
- 1.5A
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.58mm
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 25V
- Transistor Type :
- NPN
- Published :
- 2007
- Mounting Type :
- Through Hole
- Weight :
- 240mg
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- hFE Min :
- 85
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- ECCN Code :
- EAR99
- Height :
- 4.58mm
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 25V
- Element Configuration :
- Single
- Transition Frequency :
- 190MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- SS8050
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- 25V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Datasheets
- SS8050DTA
SS8050DTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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