SS8050DTA
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- Mfr.Part #
- SS8050DTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 152,460
- In Stock ：
- 152,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Voltage - Rated DC :
- 25V
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Height :
- 4.58mm
- Transition Frequency :
- 190MHz
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- hFE Min :
- 85
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Max Power Dissipation :
- 1W
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 1.5A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- SS8050
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 4.58mm
- Weight :
- 240mg
- Width :
- 3.86mm
- Current Rating :
- 1.5A
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Datasheets
- SS8050DTA
SS8050DTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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