SS8050BBU
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- Mfr.Part #
- SS8050BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 2,138
- In Stock ：
- 2,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Packaging :
- Bulk
- Number of Pins :
- 3
- Length :
- 4.58mm
- Current Rating :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Width :
- 3.86mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 179mg
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Height :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 85
- Lead Free :
- Lead Free
- Base Part Number :
- SS8050
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- JESD-609 Code :
- e3
- Max Collector Current :
- 1.5A
- Transition Frequency :
- 190MHz
- Factory Lead Time :
- 7 Weeks
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Voltage - Rated DC :
- 25V
- Datasheets
- SS8050BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050BBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050BBU Applications
There are a lot of ON Semiconductor
SS8050BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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