SS8050BBU
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- Mfr.Part #
- SS8050BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 2,138
- In Stock ：
- 2,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Bulk
- Terminal Finish :
- Tin (Sn)
- Weight :
- 179mg
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 1W
- Current Rating :
- 1.5A
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Base Part Number :
- SS8050
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.58mm
- Voltage - Rated DC :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Transistor Type :
- NPN
- Width :
- 3.86mm
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Published :
- 2007
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Breakdown Voltage :
- 25V
- Length :
- 4.58mm
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transition Frequency :
- 190MHz
- hFE Min :
- 85
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Datasheets
- SS8050BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050BBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050BBU Applications
There are a lot of ON Semiconductor
SS8050BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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