SS8050BBU
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- Mfr.Part #
- SS8050BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 2,138
- In Stock ：
- 2,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Height :
- 4.58mm
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- hFE Min :
- 85
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 25V
- Length :
- 4.58mm
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Published :
- 2007
- Max Collector Current :
- 1.5A
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Current Rating :
- 1.5A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 7 Weeks
- Transistor Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.86mm
- Base Part Number :
- SS8050
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Weight :
- 179mg
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 190MHz
- Collector Emitter Voltage (VCEO) :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Datasheets
- SS8050BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050BBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050BBU Applications
There are a lot of ON Semiconductor
SS8050BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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