SS8050

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Mfr.Part #
SS8050
Manufacturer
MDD
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 25V 1.5A SOT23
Stock
16,150
In Stock :
16,150

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Manufacturer :
MDD
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
400mV
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Max Power Dissipation :
300mW
Terminal Position :
Dual
Power - Max :
300mW
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
10 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Type :
NPN
Operating Temperature :
150°C TJ
JESD-30 Code :
R-PDSO-G3
Pbfree Code :
yes
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
100MHz
Published :
2016
Transition Frequency :
100MHz
Transistor Element Material :
SILICON
Number of Elements :
1
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Breakdown Voltage :
25V
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Max Collector Current :
1.5A
Mounting Type :
Surface Mount
Configuration :
Single
Polarity/Channel Type :
NPN
Datasheets
SS8050
Introducing Transistors - Bipolar (BJT) - Single MDD SS8050 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, SS8050 pinout, SS8050 datasheet PDF, SS8050 amp .Beyond Transistors - Bipolar (BJT) - Single MDD SS8050 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

MDD SS8050


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SS8050-G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.

SS8050-G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 100MHz


SS8050-G Applications


There are a lot of Comchip Technology
SS8050-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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