SS8050CTA
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- Mfr.Part #
- SS8050CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Length :
- 4.58mm
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 25V
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Weight :
- 240mg
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- hFE Min :
- 85
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Width :
- 3.86mm
- Current Rating :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1W
- Transition Frequency :
- 190MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 25V
- Published :
- 2010
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- Base Part Number :
- SS8050
- Radiation Hardening :
- No
- Height :
- 4.58mm
- Datasheets
- SS8050CTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050CTA Applications
There are a lot of ON Semiconductor
SS8050CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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