SS8050CBU

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Mfr.Part #
SS8050CBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 25V 1.5A TO92-3
Stock
159,639
In Stock :
159,639

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
25V
Collector Base Voltage (VCBO) :
40V
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
85
Transistor Element Material :
SILICON
Power Dissipation :
1W
Packaging :
Bulk
Lead Free :
Lead Free
ECCN Code :
EAR99
Weight :
179mg
Gain Bandwidth Product :
100MHz
Polarity/Channel Type :
NPN
Element Configuration :
Single
Mount :
Through Hole
Length :
4.58mm
Operating Temperature :
150°C TJ
Base Part Number :
SS8050
Current Rating :
1.5A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Voltage - Rated DC :
25V
Max Collector Current :
1.5A
Published :
2017
Width :
3.86mm
Frequency :
100MHz
Number of Terminations :
3
Transistor Application :
AMPLIFIER
Number of Pins :
3
Transition Frequency :
190MHz
Height :
4.58mm
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
25V
Pbfree Code :
yes
Radiation Hardening :
No
Factory Lead Time :
7 Weeks
Emitter Base Voltage (VEBO) :
6V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Terminal Position :
BOTTOM
Collector Emitter Saturation Voltage :
500mV
JESD-609 Code :
e3
Max Power Dissipation :
1W
Datasheets
SS8050CBU
Introducing Transistors - Bipolar (BJT) - Single onsemi SS8050CBU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:SS8050, Number of Terminations:3, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), SS8050CBU pinout, SS8050CBU datasheet PDF, SS8050CBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS8050CBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SS8050CBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

SS8050CBU Overview


DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 80mA, 800mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 190MHz.In extreme cases, the collector current can be as low as 1.5A volts.

SS8050CBU Features


the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz


SS8050CBU Applications


There are a lot of ON Semiconductor
SS8050CBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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