SQJB68EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

Automotive, AEC-Q101, TrenchFET®

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

Max Junction Temperature (Tj) :

175°C

Drain to Source Resistance :

76.5mOhm

Package / Case :

PowerPAK® SO-8 Dual

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9 ns

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.267mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

92mOhm @ 4A, 10V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

27W

Supplier Device Package :

PowerPAK® SO-8 Dual

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Power - Max :

27W

FET Type :

2 N-Channel (Dual)

Number of Channels :

2