SQJ968EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

23.5A Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Number of Pins :

8

Terminal Position :

Single

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

18A

REACH SVHC :

Unknown

Power Dissipation :

25W

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Package / Case :

PowerPAK® SO-8 Dual

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0336Ohm

FET Feature :

Standard

Operating Temperature :

-55°C~175°C TA

Max Power Dissipation :

25W

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

2

Mount :

Surface Mount

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

4 mJ

Threshold Voltage :

2V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power - Max :

42W Tc

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

714pF @ 30V

Rds On (Max) @ Id, Vgs :

33.6m Ω @ 4.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)