SQ9945BEY-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

1.7 ns

Rise Time :

2.8ns

Drain to Source Voltage (Vdss) :

60V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain to Source Resistance :

64mOhm

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Rds On Max :

64 mΩ

Weight :

506.605978mg

Supplier Device Package :

8-SO

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

64mOhm @ 3.4A, 10V

Gate to Source Voltage (Vgs) :

20V

Power - Max :

4W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2013

Resistance :

64mOhm

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

17 ns

Input Capacitance :

470pF

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Dual

Max Operating Temperature :

175°C

Threshold Voltage :

2V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

5.4A

Current - Continuous Drain (Id) @ 25°C :

5.4A

Number of Channels :

2

REACH SVHC :

Unknown

Max Power Dissipation :

4W