SQ4532AEY-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.031Ohm

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.9A, 10V, 70m Ω @ 3.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

RoHS Status :

RoHS Compliant

Power Dissipation :

3.3W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Channels :

2

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, TrenchFET®

Surface Mount :

yes

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 15V 528pF @ 15V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V, 10.2nC @ 10V

Number of Terminations :

8

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

7.3A

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Max Junction Temperature (Tj) :

175°C

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc 5.3A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

53 pF