SQ3985EV-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-G6

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 10V

Number of Elements :

2

ECCN Code :

EAR99

JEDEC-95 Code :

MO-193AA

DS Breakdown Voltage-Min :

20V

Terminal Finish :

Matte Tin (Sn)

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Power - Max :

3W

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

FET Feature :

Standard

Drain-source On Resistance-Max :

0.145Ohm

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

145m Ω @ 2.8A, 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

12 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, TrenchFET®

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Feedback Cap-Max (Crss) :

57 pF

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3.9A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)