SQ1539EH-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

Feedback Cap-Max (Crss) :

10 pF

Factory Lead Time :

12 Weeks

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PDSO-G6

Drain Current-Max (Abs) (ID) :

0.85A

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

280m Ω @ 1A, 10V, 940m Ω @ 500mA, 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

48pF @ 15V 50pF @ 15V

Drain-source On Resistance-Max :

0.28Ohm

Terminal Form :

Gull wing

Power - Max :

1.5W

Vgs(th) (Max) @ Id :

2.6V @ 250μA

DS Breakdown Voltage-Min :

30V

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V, 1.6nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

850mA Tc

ECCN Code :

EAR99

Mounting Type :

Surface Mount

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

30V

FET Type :

N and P-Channel

Package / Case :

PowerPAK® SC-70-6 Dual