SP8M6FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Factory Lead Time :

20 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C

FET Feature :

Standard

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5A

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 5V, 5.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V 490pF @ 10V

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

5A Ta 3.5A Ta

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V, 90m Ω @ 3.5A, 10V

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

20A

Power - Max :

2W

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.082Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2016

Transistor Application :

SWITCHING