SMA5127

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

4A

Rds On (Max) @ Id, Vgs :

550 Ω @ 2A, 4V

Mounting Type :

Through Hole

FET Type :

3 N and 3 P-Channel (3-Phase Bridge)

Continuous Drain Current (ID) :

4A

Number of Terminations :

12

Power - Max :

4W

Transistor Element Material :

SILICON

Configuration :

COMPLEX

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Through Hole

Published :

2001

HTS Code :

8541.29.00.95

Factory Lead Time :

12 Weeks

Max Power Dissipation :

4W

ECCN Code :

EAR99

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Supplier Device Package :

12-SIP

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Package / Case :

12-SIP

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

8A

Drain-source On Resistance-Max :

0.55Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

6

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

4A

Package :

Tube

Terminal Position :

Single

Pin Count :

12

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSIP-T12

Series :

-

Technology :

MOSFET (Metal Oxide)

Base Product Number :

SMA51

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

150°C TJ

FET Feature :

Standard