SIS590DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Product Type :

MOSFET

Technology :

Si

Package / Case :

PowerPAK? 1212-8 Dual

Tradename :

TrenchFET

Supplier Device Package :

PowerPAK? 1212-8 Dual

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)

Transistor Polarity :

N and P Channel

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Package :

Digi-Reel?

Transistor Type :

1 N-Channel, 1 P-Channel

Channel Type :

N, P

Manufacturer :

Vishay

Brand :

Vishay / Siliconix

Continuous Drain Current Id :

4A

Pin Count :

8

Number of Elements per Chip :

2

Maximum Operating Temperature :

+ 150 C

Package Type :

PowerPAK 1212-8 Dual

Power - Max :

2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)

Qualification :

-

Subcategory :

MOSFETs

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Channels :

2 Channel

Mounting Style :

SMD/SMT

FET Type :

N and P-Channel

Rise Time :

90 ns, 100 ns

Packaging :

Reel

FET Feature :

Standard

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

RoHS :

Details

Configuration :

Dual

Product Category :

MOSFET

Series :

TrenchFET?

Minimum Operating Temperature :

- 55 C