SIRB40DP-T1-GE3
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- Mfr.Part #
- SIRB40DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8 Dual
- Datasheet
- Download
- Description
- MOSFET 2 N-CH 40V POWERPAK SO8
- Stock
- 3,255
- In Stock ：
- 3,255
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- Standard
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- FET Type :
- 2 N-Channel (Dual)
- Series :
- TrenchFET®
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 3.25m Ω @ 10A, 10V
- Factory Lead Time :
- 14 Weeks
- Power - Max :
- 46.2W
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4290pF @ 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- PowerPAK® SO-8 Dual
- Drain to Source Voltage (Vdss) :
- 40V
- Datasheets
- SIRB40DP-T1-GE3
SIRB40DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
SIRB40DP-T1-GE3 Description
SIRB40DP-T1-GE3 is a 40 V Dual N-Channel MOSFET. This high-density process is tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low-voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
SIRB40DP-T1-GE3 Features
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS-Qoss FOM
Qgd/Qgs ratio < 1 optimizes switching characteristics
100 % Rg and UIS tested
SIRB40DP-T1-GE3 Applications
DC/DC converters
DC/AC inverters
Synchronous rectification
Battery and load switch
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