SI7224DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

30

Length :

3.3mm

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Dual

Number of Terminations :

6

Transistor Application :

SWITCHING

Number of Pins :

8

JESD-609 Code :

e3

Max Power Dissipation :

23W

Factory Lead Time :

25 Weeks

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Mount :

Surface Mount

Turn On Delay Time :

20 ns

Drain-source On Resistance-Max :

0.035Ohm

Number of Channels :

2

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE

Width :

3.3mm

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power - Max :

17.8W 23W

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

6A

Height :

1.04mm

Rise Time :

10ns

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Mounting Type :

Surface Mount

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI7224

JESD-30 Code :

S-XDSO-C6

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Package / Case :

PowerPAK® 1212-8 Dual