SI7220DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Rise Time :

10ns

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

2

Mounting Type :

Surface Mount

Max Power Dissipation :

1.3W

Length :

3.05mm

Base Part Number :

SI7220

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

60m Ω @ 4.8A, 10V

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

3.4A

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-XDSO-C6

Power Dissipation :

1.3W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.05mm

Avalanche Energy Rating (Eas) :

6.1 mJ

Series :

TrenchFET®

Package / Case :

PowerPAK® 1212-8 Dual

Number of Pins :

8

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

Terminal Form :

C BEND

Published :

2016

Drain-source On Resistance-Max :

0.06Ohm

Height :

1.04mm

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

20 ns

Number of Terminations :

6

Factory Lead Time :

14 Weeks