SI7216DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

SI7216

Operating Temperature :

-50°C~150°C TJ

Pin Count :

8

Fall Time (Typ) :

5 ns

Package / Case :

PowerPAK® 1212-8 Dual

JESD-30 Code :

S-XDSO-C6

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

19 ns

Drain Current-Max (Abs) (ID) :

6.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Dual

Resistance :

40mOhm

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2.5W

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

Max Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Rds On (Max) @ Id, Vgs :

32m Ω @ 5A, 10V

Published :

2011

JESD-609 Code :

e3

Threshold Voltage :

3V

REACH SVHC :

Unknown

Turn On Delay Time :

9 ns

Continuous Drain Current (ID) :

6A

Length :

3.05mm

FET Feature :

Standard

Mount :

Surface Mount

Rise Time :

57ns

Terminal Form :

C BEND

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power - Max :

20.8W

ECCN Code :

EAR99

Width :

3.05mm

Height :

1.04mm

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

40V

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 20V

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Channels :

2

Avalanche Energy Rating (Eas) :

5 mJ