SI4435DYPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

HEXFET®

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 15V

JESD-609 Code :

e3

Number of Elements :

1

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

8A

JEDEC-95 Code :

MS-012AA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Terminal Form :

Gull wing

FET Type :

P-Channel

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

50A

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Dual

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.02Ohm

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

ULTRA LOW RESISTANCE

JESD-30 Code :

R-PDSO-G8

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V