SI4406DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.91mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Length :

4.88mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

3.18mm

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

21 ns

Published :

2009

Series :

TrenchFET®

Supplier Device Package :

8-SO

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

15ns

Element Configuration :

Single

Turn-Off Delay Time :

100 ns

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

4.5mOhm

RoHS Status :

ROHS3 Compliant

Weight :

186.993455mg

Radiation Hardening :

No

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 20A, 10V

Fall Time (Typ) :

30 ns

Mounting Type :

Surface Mount

Rds On Max :

4.5 mΩ

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

13A

Power Dissipation-Max :

1.6W Ta

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1