SI4401BDY-T1-E3
- Mfr.Part #
- SI4401BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.7A 8SO
- Stock
- 25,174
- In Stock :
- 25,174
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 40V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5mm
- Max Junction Temperature (Tj) :
- 150°C
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Weight :
- 186.993455mg
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 5V
- Power Dissipation-Max :
- 1.5W Ta
- Pin Count :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A Ta
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Resistance :
- 14mOhm
- Height :
- 1.75mm
- Width :
- 4mm
- REACH SVHC :
- No SVHC
- Series :
- TrenchFET®
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Rise Time :
- 15ns
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- -40V
- Fall Time (Typ) :
- 15 ns
- Terminal Position :
- Dual
- Factory Lead Time :
- 14 Weeks
- Continuous Drain Current (ID) :
- -8.7A
- Turn On Delay Time :
- 16 ns
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -3V
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 97 ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Power Dissipation :
- 1.5W
- Published :
- 2016
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 10.5A, 10V
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- SI4401BDY-T1-E3

P-Channel Tape & Reel (TR) 14m Ω @ 10.5A, 10V ±20V 55nC @ 5V 40V 8-SOIC (0.154, 3.90mm Width)
SI4401BDY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -40V.As a result of its turn-off delay time, which is 97 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -3V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4401BDY-T1-E3 Features
a continuous drain current (ID) of -8.7A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 97 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
SI4401BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4401BDY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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