SI4408DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

21A

Terminal Form :

Gull wing

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Published :

2008

Weight :

506.605978mg

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation-Max :

1.6W Ta

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Width :

4mm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Factory Lead Time :

14 Weeks

Height :

1.55mm

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

60 ns

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 21A, 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Resistance :

4.5mOhm

Pbfree Code :

yes

Terminal Position :

Dual

Rise Time :

42ns

Nominal Vgs :

1 V

Fall Time (Typ) :

26 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Number of Channels :

1

Element Configuration :

Single

Power Dissipation :

1.6W

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

ECCN Code :

EAR99

Turn On Delay Time :

42 ns

Length :

5mm

Radiation Hardening :

No