SI4408DY-T1-E3

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Mfr.Part #
SI4408DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 14A 8SO
Stock
9,426
In Stock :
9,426

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
42ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Mount :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Nominal Vgs :
1 V
Turn On Delay Time :
42 ns
Number of Channels :
1
Power Dissipation :
1.6W
Fall Time (Typ) :
26 ns
Lead Free :
Lead Free
Turn-Off Delay Time :
60 ns
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
1V @ 250μA (Min)
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Number of Terminations :
8
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
30
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 4.5V
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 21A, 10V
Width :
4mm
Weight :
506.605978mg
Height :
1.55mm
Drain to Source Breakdown Voltage :
20V
Power Dissipation-Max :
1.6W Ta
Series :
TrenchFET®
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Element Configuration :
Single
REACH SVHC :
Unknown
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Factory Lead Time :
14 Weeks
Continuous Drain Current (ID) :
21A
Resistance :
4.5mOhm
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
8
Pin Count :
8
Length :
5mm
Published :
2008
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
14A Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Datasheets
SI4408DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4408DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4408DY-T1-E3 pinout, SI4408DY-T1-E3 datasheet PDF, SI4408DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4408DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4408DY-T1-E3


N-Channel Tape & Reel (TR) 4.5m Ω @ 21A, 10V ±20V 32nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

SI4408DY-T1-E3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI4408DY-T1-E3 Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 60 ns


SI4408DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4408DY-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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