SI4408DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14A Ta

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Turn On Delay Time :

42 ns

Radiation Hardening :

No

Number of Channels :

1

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Nominal Vgs :

1 V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

21A

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 21A, 10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Height :

1.55mm

Turn-Off Delay Time :

60 ns

Power Dissipation :

1.6W

Published :

2008

Lead Free :

Lead Free

Mount :

Surface Mount

Terminal Position :

Dual

ECCN Code :

EAR99

Rise Time :

42ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Resistance :

4.5mOhm

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Width :

4mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Weight :

506.605978mg

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Fall Time (Typ) :

26 ns

Power Dissipation-Max :

1.6W Ta

Transistor Element Material :

SILICON

JESD-609 Code :

e3