SI4408DY-T1-E3
- Mfr.Part #
- SI4408DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 14A 8SO
- Stock
- 9,426
- In Stock :
- 9,426
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- FET Type :
- N-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pbfree Code :
- yes
- Turn On Delay Time :
- 42 ns
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 5mm
- Nominal Vgs :
- 1 V
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 21A
- Number of Terminations :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 21A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 4.5V
- Height :
- 1.55mm
- Turn-Off Delay Time :
- 60 ns
- Power Dissipation :
- 1.6W
- Published :
- 2008
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Rise Time :
- 42ns
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Factory Lead Time :
- 14 Weeks
- REACH SVHC :
- Unknown
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Resistance :
- 4.5mOhm
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 4mm
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Weight :
- 506.605978mg
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Fall Time (Typ) :
- 26 ns
- Power Dissipation-Max :
- 1.6W Ta
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Datasheets
- SI4408DY-T1-E3

N-Channel Tape & Reel (TR) 4.5m Ω @ 21A, 10V ±20V 32nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4408DY-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 21A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI4408DY-T1-E3 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 60 ns
SI4408DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4408DY-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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