SI4408DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

14A Ta

FET Type :

N-Channel

Fall Time (Typ) :

26 ns

Turn-Off Delay Time :

60 ns

Number of Pins :

8

Number of Terminations :

8

Series :

TrenchFET®

Continuous Drain Current (ID) :

21A

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 21A, 10V

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Height :

1.55mm

Weight :

506.605978mg

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

Mount :

Surface Mount

Width :

4mm

Resistance :

4.5mOhm

Nominal Vgs :

1 V

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Published :

2008

Power Dissipation :

1.6W

Turn On Delay Time :

42 ns

Power Dissipation-Max :

1.6W Ta

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

42ns

Length :

5mm

Transistor Element Material :

SILICON