SI1036X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Number of Elements :

2

JESD-30 Code :

R-PDSO-F6

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Rds On (Max) @ Id, Vgs :

540m Ω @ 500mA, 4.5V

Series :

TrenchFET®

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Flat

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

540mOhm

Surface Mount :

yes

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

610mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Power - Max :

220mW