SI1035X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

LOW THRESHOLD

Drain to Source Breakdown Voltage :

20V

Continuous Drain Current (ID) :

180mA

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Resistance :

8Ohm

Terminal Position :

Dual

Mount :

Surface Mount

Weight :

32.006612mg

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

180mA 145mA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Height :

600μm

Terminal Form :

Flat

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

0.18A

RoHS Status :

ROHS3 Compliant

Width :

1.2mm

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Power Dissipation :

250mW

Package / Case :

SOT-563, SOT-666

Operating Mode :

ENHANCEMENT MODE

Length :

1.7mm

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

400mV @ 250μA (Min)

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 4.5V

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Published :

2016

Base Part Number :

SI1035

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

5V

Pin Count :

6