SI1035X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Weight :

32.006612mg

Vgs(th) (Max) @ Id :

400mV @ 250μA (Min)

Package / Case :

SOT-563, SOT-666

FET Feature :

Logic Level Gate

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Power - Max :

250mW

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Number of Pins :

6

Length :

1.7mm

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

20V

Rds On Max :

5 Ω

Rds On (Max) @ Id, Vgs :

5Ohm @ 200mA, 4.5V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

200mA

Base Part Number :

SI1035

Gate to Source Voltage (Vgs) :

5V

Series :

TrenchFET®

Mounting Type :

Surface Mount

Width :

1.2mm

Number of Channels :

2

Max Power Dissipation :

250mW

Current - Continuous Drain (Id) @ 25°C :

180mA 145mA

Height :

600μm

Drain to Source Resistance :

8Ohm

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

SC-89-6

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

250mW